Summary and Info
The devices described in “Advanced MOS-Gated Thyristor Concepts” are utilized in microelectronics production equipment, in power transmission equipment, and for very high power motor control in electric trains, steel-mills, etc. Advanced concepts that enable improving the performance of power thyristors are discussed here, along with devices with blocking voltage capabilities of 5,000-V, 10,000-V and 15,000-V. Throughout the book, analytical models are generated to allow a simple analysis of the structures and to obtain insight into the underlying physics. The results of two-dimensional simulations are provided to corroborate the analytical models and give greater insight into the device operation.
More About the Author
B. Jayant Baliga (born (1948-04-28)28 April 1948 in Chennai) is an Indian electrical engineer best known for his work in power semiconductor devices, and particularly the invention of the insulated gate bipolar transistor.