Summary and Info
Operation and Modeling of the MOS Transistor has become a standard in academia and industry. Extensively revised and updated, the third edition of this highly acclaimed text provides a thorough treatment of the MOS transistor--the key element of modern microelectronic chips.New to this edition:* Energy bands and the energy barrier viewpoint are integrated into the discussion in a smooth, simple manner* Expanded discussion of small-dimension effects, including velocity saturation, drain-induced barrier lowering, ballistic operation, polysilicon depletion, quantum effects, gate tunneling current, and gate-induced drain leakage* Expanded discussion of small-signal modeling, including gate and substrate current modeling and flicker noise* New chapter on substrate nonuniformity and structural effects, discussing transversal and lateral (halo) doping nonuniformity, stress and well proximity effects, and statistical variability* A completely re-written chapter on modeling for circuit simulation, covering the considerations and pitfalls in the development of models for computer-aided design* Extensively updated bibliography* An accompanying website includes additional details not covered in the text, as well as model computer code
More About the Author
Yannis Tsividis is Charles Batchelor Professor of Electrical Engineering at Columbia University. Tsividis designed and built the first integrated MOSFET operational amplifier in 1976. Tsividis is Fellow of the IEEE and received the Golden Jubilee Medal of the IEEE in 2000.
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